The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires

碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteris...

Full description

Bibliographic Details
Main Authors: Hao-Ming Huang, 黃皓銘
Other Authors: 李嗣涔
Format: Others
Language:en_US
Online Access:http://ndltd.ncl.edu.tw/handle/25975344336542731577
id ndltd-TW-094NTU05428067
record_format oai_dc
spelling ndltd-TW-094NTU054280672015-12-16T04:38:21Z http://ndltd.ncl.edu.tw/handle/25975344336542731577 The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires 定向成長矽奈米線之製程以及電性研究 Hao-Ming Huang 黃皓銘 碩士 國立臺灣大學 電子工程學研究所 94 Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteristics of SiNWs with different doping concentrations are measured by four-points probe method. The possibility of application of SiNWs to the analog circuit is proposed. 李嗣涔 學位論文 ; thesis 60 en_US
collection NDLTD
language en_US
format Others
sources NDLTD
description 碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === Orientation controlled silicon nanowires (SiNWs) have been synthesized under the effect of the electric field via low pressure chemical vapor deposition system. The p-type impurities are used to dope SiNWs and change their resistivity. The electrical characteristics of SiNWs with different doping concentrations are measured by four-points probe method. The possibility of application of SiNWs to the analog circuit is proposed.
author2 李嗣涔
author_facet 李嗣涔
Hao-Ming Huang
黃皓銘
author Hao-Ming Huang
黃皓銘
spellingShingle Hao-Ming Huang
黃皓銘
The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
author_sort Hao-Ming Huang
title The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
title_short The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
title_full The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
title_fullStr The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
title_full_unstemmed The Fabrication and Electrical Characteristics of Orientation Controlled Silicon Nanowires
title_sort fabrication and electrical characteristics of orientation controlled silicon nanowires
url http://ndltd.ncl.edu.tw/handle/25975344336542731577
work_keys_str_mv AT haominghuang thefabricationandelectricalcharacteristicsoforientationcontrolledsiliconnanowires
AT huánghàomíng thefabricationandelectricalcharacteristicsoforientationcontrolledsiliconnanowires
AT haominghuang dìngxiàngchéngzhǎngxìnàimǐxiànzhīzhìchéngyǐjídiànxìngyánjiū
AT huánghàomíng dìngxiàngchéngzhǎngxìnàimǐxiànzhīzhìchéngyǐjídiànxìngyánjiū
AT haominghuang fabricationandelectricalcharacteristicsoforientationcontrolledsiliconnanowires
AT huánghàomíng fabricationandelectricalcharacteristicsoforientationcontrolledsiliconnanowires
_version_ 1718150465327202304