Studies on strained and strain-compensated GaAsSb-related quantum well structures
碩士 === 國立臺灣大學 === 電子工程學研究所 === 94 === In this thesis, we report the optical properties of strained and strain- compensated GaAsSb-based quantum well (QW) structures. First, we investigated the effects of barrier thickness on the gain spectrum of GaAsSb/GaAs QW. For a QW with a well thickness of 7 nm...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61296425538399546677 |