Measurements of Uniformity of Plasma Etching System Using Planar Type Multiple Probes

碩士 === 國立臺灣大學 === 應用力學研究所 === 94 === Etching process has played a crucial role in modern semiconductor industry. Most suppliers tried hard to investing research and development as their own nucleus technology. Applied Materials had developed a device, diagnostic pedestal assembly, for measuring the...

Full description

Bibliographic Details
Main Authors: Kuang-Chung Liu, 劉光中
Other Authors: Jaw-Yen Yang
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/34806645482063948629
Description
Summary:碩士 === 國立臺灣大學 === 應用力學研究所 === 94 === Etching process has played a crucial role in modern semiconductor industry. Most suppliers tried hard to investing research and development as their own nucleus technology. Applied Materials had developed a device, diagnostic pedestal assembly, for measuring the uniformity of etching process, as an efficient instrument for etching equipment research. This experiment is based on a GEC reference cell. Attempt to start up this equipment, and then successfully maintain plasma with it. Use the same method to fabricate an eight inch chamber and twelve inch chamber and successfully maintaining plasma with it. During it, the hardest part is the design of the vacuum system and the tolerance of it. Then design a multiple planar type plasma probe, size of four and eight inch, to measure the uniformity of four inch plasma etching system. And verify with such researches of GEC reference cell among these years, and discuss the testing conditions.