Growth and Characterization of Erbium doped ZnO

碩士 === 國立臺灣科技大學 === 電子工程系 === 94 === Erbium doped ZnO has been prepared by vapor-phase transport process. ZnO powder, graphite powder and Er2O3 powder were mixed and positioned in a tube furnace. The tube furnace is heated at 1000°C for 1 hour. Er:ZnO were deposition on silicon wafers located nea...

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Bibliographic Details
Main Authors: Ping-chang Chiang, 蔣秉昌
Other Authors: Liang-chiun Chao
Format: Others
Language:en_US
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/ntza58