The Studies of Pulse Laser Deposition for AlN Thin Film
碩士 === 國立高雄大學 === 電機工程學系碩士班 === 94 === AlN have excellent property, it is to possible replace the existence SiO2 gate oxide, become the first choice for high density capacitor, high frequency acoustic wave devices, and shot wave length photo-electronic devices. We report the study of the effects of...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/07625198012936647266 |