An enhancement method of n-type porous silicon fabrication by Hall effect
碩士 === 中國文化大學 === 材料科學與奈米科技研究所 === 94 === In this thesis, the researches focus on the study of the difficult etched porous silicon. Porous has been extensive researched, but the majority study is based on the P-type silicon only, the main reason is that the N-type silicon has less electric holes tha...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/5gge5e |