The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 94 === This simulation and analysis of high electron mobility transistors (HEMTs) and silicon-on-insulation field effect transistors (SOI FETs) by two-dimensional simulation software MEDICI are researched in the study. New proposed structures, such as dual channel...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/10599786702003084723 |