| Summary: | 碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 94 === This simulation and analysis of high electron mobility transistors (HEMTs) and silicon-on-insulation field effect transistors (SOI FETs) by two-dimensional simulation software MEDICI are researched in the study.
New proposed structures, such as dual channel HEMT (DCHEMT) and double gate SOI-FETs (DGSOI) are thoroughly researched. Also, they are compared to the conventional single channel HEMTs (SCHEMTs) and single gate SOI-FETs (SGSOI), respectively. Design criterions are presented concerning impurity doping approaches, epitaxy layer thickness and so on. The electric characteristics, such as electron mobility, electron concentration, current density and lattice temperature are simulated and discussed. The study results show that DCHEMT can reduce leakage current effectively, as well as increase direct operating range, drain current and transconductance. In addition, the design of DGSOI can improve the short channel effects that includes the channel length modulation effect, the subthreshold current effect and the bulk punch through effect.
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