The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors

碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 94 === This simulation and analysis of high electron mobility transistors (HEMTs) and silicon-on-insulation field effect transistors (SOI FETs) by two-dimensional simulation software MEDICI are researched in the study. New proposed structures, such as dual channel...

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Main Authors:	Yu-Chieh Chen, 陳語絜
Other Authors:	Jia-Chuan Lin
Format:	Others
Language:	zh-TW
Published:	2006
Online Access:	http://ndltd.ncl.edu.tw/handle/10599786702003084723

id	ndltd-TW-094SJSM0689010
record_format	oai_dc
spelling	ndltd-TW-094SJSM06890102015-10-13T10:34:49Z http://ndltd.ncl.edu.tw/handle/10599786702003084723 The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors 高電子遷移率場效電晶體及絕緣層上矽場效電晶體之模擬分析 Yu-Chieh Chen 陳語絜碩士聖約翰科技大學自動化及機電整合研究所 94 This simulation and analysis of high electron mobility transistors (HEMTs) and silicon-on-insulation field effect transistors (SOI FETs) by two-dimensional simulation software MEDICI are researched in the study. New proposed structures, such as dual channel HEMT (DCHEMT) and double gate SOI-FETs (DGSOI) are thoroughly researched. Also, they are compared to the conventional single channel HEMTs (SCHEMTs) and single gate SOI-FETs (SGSOI), respectively. Design criterions are presented concerning impurity doping approaches, epitaxy layer thickness and so on. The electric characteristics, such as electron mobility, electron concentration, current density and lattice temperature are simulated and discussed. The study results show that DCHEMT can reduce leakage current effectively, as well as increase direct operating range, drain current and transconductance. In addition, the design of DGSOI can improve the short channel effects that includes the channel length modulation effect, the subthreshold current effect and the bulk punch through effect. Jia-Chuan Lin 林嘉洤 2006 學位論文 ; thesis 63 zh-TW
collection	NDLTD
language	zh-TW
format	Others
sources	NDLTD
description	碩士 === 聖約翰科技大學 === 自動化及機電整合研究所 === 94 === This simulation and analysis of high electron mobility transistors (HEMTs) and silicon-on-insulation field effect transistors (SOI FETs) by two-dimensional simulation software MEDICI are researched in the study. New proposed structures, such as dual channel HEMT (DCHEMT) and double gate SOI-FETs (DGSOI) are thoroughly researched. Also, they are compared to the conventional single channel HEMTs (SCHEMTs) and single gate SOI-FETs (SGSOI), respectively. Design criterions are presented concerning impurity doping approaches, epitaxy layer thickness and so on. The electric characteristics, such as electron mobility, electron concentration, current density and lattice temperature are simulated and discussed. The study results show that DCHEMT can reduce leakage current effectively, as well as increase direct operating range, drain current and transconductance. In addition, the design of DGSOI can improve the short channel effects that includes the channel length modulation effect, the subthreshold current effect and the bulk punch through effect.
author2	Jia-Chuan Lin
author_facet	Jia-Chuan Lin Yu-Chieh Chen 陳語絜
author	Yu-Chieh Chen 陳語絜
spellingShingle	Yu-Chieh Chen 陳語絜 The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
author_sort	Yu-Chieh Chen
title	The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
title_short	The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
title_full	The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
title_fullStr	The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
title_full_unstemmed	The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors
title_sort	simulation and analysis on high electron mobility transistors and silicon-on-insulation field effect transistorsthe simulation and analysis on high electron mobility transistors and silicon-on-insulation field effect transistors
publishDate	2006
url	http://ndltd.ncl.edu.tw/handle/10599786702003084723
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The Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect TransistorsThe Simulation and Analysis on High Electron Mobility Transistors and Silicon-on-Insulation Field Effect Transistors

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