Study of Subthreshold Behavior for the Undoped Surrounding-Gate MOSFETs
碩士 === 南台科技大學 === 電子工程系 === 94 === In recent years, studies about Surrounding-Gate (SG) transistor have successively been proposed, and have attracted a lot of attention. For future ULSI's design, it is shown that SG transistor have the following advantages, such as: reduced short channel effec...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/61080512204270144554 |