Effect of stabilizing compounds on electroless copper deposition

• Main Authors: Yi-Lung Chen, 陳一龍
• Other Authors: 張俊賢
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/sk93cq

碩士 === 國立臺北科技大學 === 化學工程所 === 94 === Recently copper has been used to replace Al metallization in Ultra Large Scale Integrated (ULSI) technology because of low resistivity and stress-induced voiding. Copper can be deposited by physical vapor deposition, thermal-induced reflow, chemical vapor deposition; electroplating and electroless deposition. Electroless copper deposition can be processed with high speed in mass production. Therefore, Electroless copper deposition would be a potential technology for the manufacture of ULSI. The main purpose of this research is to investigate the effect of Potassium iodide and 1,10-phenanthrolinethe plating rate, surface morphology, crystal and resistivity of copper deposition. And to study the mechanism principle of additives electroless copper deposition by the electrochemical impedance spectroscopy(EIS), the double layer capacitance and resistance of the working electrode can be calculated. The equivalent electronic circuit for the electrochemical cell of electroless copper deposition will be obtained by simulation to further understand the effect of additive on electroless copper deposition. These results show that with addition of Potassium iodide and 1,10-phenanthroline as additive the borate buffered electroless copper plating solutions was stabilized and the plating rate was decreased ,surface morphology of copper deposition was smoothed, the texture coefficient remained the same within experimental error, the size of the crystal was decreased, the resistivity was decreased reduce when thinkness of fimle increasment Potassium iodide in plating solution. The charge transfer resistance and double layer capacitance of the working electrode were increased.