Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method
碩士 === 國立臺北科技大學 === 有機高分子研究所 === 94 === A thin film of Zn2SiO4:Mn was prepared on silicon wafer using combinatorial co-sputtering technique. The optimized compositions for highest photoluminescence (PL) quantum yield in Zn2-xSiO4:Mnx is 50% of oxygen concentrations, 150 W of ZnO sputtering power, 20...
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ndltd-TW-094TIT053100272019-06-27T05:09:04Z http://ndltd.ncl.edu.tw/handle/k357q3 Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method 以化學晶片平台探討Zn2SiO4:Mn薄膜之光致發光及結構特性 Shu-Hei Wang 王淑惠 碩士 國立臺北科技大學 有機高分子研究所 94 A thin film of Zn2SiO4:Mn was prepared on silicon wafer using combinatorial co-sputtering technique. The optimized compositions for highest photoluminescence (PL) quantum yield in Zn2-xSiO4:Mnx is 50% of oxygen concentrations, 150 W of ZnO sputtering power, 200 W of SiO2 sputtering power, 25 W of Mn sputtering power with Mn(x) concentrations of ~ 0.222, 3 mTorr of deposition pressure, and 1000 °C of annealing temperature. The microstructure of the deposited film was characterized by X-ray Diffraction (XRD). The XRD result indicates that the intensity of green PL of Zn2-xSiO4:Mnx film increased with increase of crystallization in (113)、(223)、(410) of Zn2-xSiO4:Mnx. The CIE of films was about x =0.2366,y=0.7423. Chao- Chin Su 蘇昭瑾 2006 學位論文 ; thesis 88 zh-TW |
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碩士 === 國立臺北科技大學 === 有機高分子研究所 === 94 === A thin film of Zn2SiO4:Mn was prepared on silicon wafer using combinatorial co-sputtering technique. The optimized compositions for highest photoluminescence (PL) quantum yield in Zn2-xSiO4:Mnx is 50% of oxygen concentrations, 150 W of ZnO sputtering power, 200 W of SiO2 sputtering power, 25 W of Mn sputtering power with Mn(x) concentrations of ~ 0.222, 3 mTorr of deposition pressure, and 1000 °C of annealing temperature. The microstructure of the deposited film was characterized by X-ray Diffraction (XRD). The XRD result indicates that the intensity of green PL of Zn2-xSiO4:Mnx film increased with increase of crystallization in (113)、(223)、(410) of Zn2-xSiO4:Mnx. The CIE of films was about x =0.2366,y=0.7423.
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author2 |
Chao- Chin Su |
author_facet |
Chao- Chin Su Shu-Hei Wang 王淑惠 |
author |
Shu-Hei Wang 王淑惠 |
spellingShingle |
Shu-Hei Wang 王淑惠 Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
author_sort |
Shu-Hei Wang |
title |
Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
title_short |
Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
title_full |
Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
title_fullStr |
Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
title_full_unstemmed |
Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method |
title_sort |
photoluminescence characteristics of zn2sio4:mn thin films by combinatorial chemistry method |
publishDate |
2006 |
url |
http://ndltd.ncl.edu.tw/handle/k357q3 |
work_keys_str_mv |
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