Photoluminescence Characteristics of Zn2SiO4:Mn Thin Films By Combinatorial Chemistry Method

• Main Authors: Shu-Hei Wang, 王淑惠
• Other Authors: Chao- Chin Su
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/k357q3

碩士 === 國立臺北科技大學 === 有機高分子研究所 === 94 === A thin film of Zn2SiO4:Mn was prepared on silicon wafer using combinatorial co-sputtering technique. The optimized compositions for highest photoluminescence (PL) quantum yield in Zn2-xSiO4:Mnx is 50% of oxygen concentrations, 150 W of ZnO sputtering power, 200 W of SiO2 sputtering power, 25 W of Mn sputtering power with Mn(x) concentrations of ~ 0.222, 3 mTorr of deposition pressure, and 1000 °C of annealing temperature. The microstructure of the deposited film was characterized by X-ray Diffraction (XRD). The XRD result indicates that the intensity of green PL of Zn2-xSiO4:Mnx film increased with increase of crystallization in (113)、(223)、(410) of Zn2-xSiO4:Mnx. The CIE of films was about x =0.2366，y=0.7423.