An Investigation on Hot Carrier Effect at Elevated Temperatures for pMOSFETs of 0.13μm Technology
碩士 === 國立臺北科技大學 === 機電整合研究所 === 94 === On the basis of the physical properties of silicon, the mean free path of holes is about one half of the electrons, and hole’s mobility is about one third of the electrons at the room temperature. Therefore, holes were considered harder to create interface stat...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/m966fh |