Using Simulation to Investigate RSCE and Vt roll-off Controls of 90 nm Node MOSFETs
碩士 === 國立臺北科技大學 === 機電整合研究所 === 94 === Due to the nonstop progress of process technology, the gate lengths of modern MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) are shrinking continually. However, such progress also brings short channel effect (SCE) and Vt roll-off to the MOSFETs. P...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/6937yx |