Epitaxial InN film using Hydrazoic acid:in-situ study of growth and ex-situ optical characterization

• Main Authors: Jr-tai Chen, 陳志泰
• Other Authors: Kuei-hsien Chen
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/38052377675094267744

碩士 === 大同大學 === 光電工程研究所 === 94 === Epitaxial InN thin film has been successfully grown along (0001) direction with wurtzite structure on c-plane GaN template using hydrazoic acid as nitrogen source by gas-source molecular beam epitaxy. Residual gas analyzer (RGA) result shows that HN3 exhibits highly dissociated property and a linearly controllable behavior. The effects of growth temperature and V/III ratio on growth of InN films were carefully studied by means of in-situ Reflection of High-Energy Electron Diffraction (RHEED), field-emission scanning electron microscope (FE-SEM), and X-ray diffraction (XRD). The best quality in morphology and crystallinity was achieved at 550oC through adjusting V/III ratio ratio adequately. The optical band gap of InN films characterized by Photoluminescence (PL) spectroscope and absorption measurement was about 1.5 eV, which can be accounted for by free electron induced Burstein-Moss shift due to high carrier concentration in InN film measured by Hall measurement. Secondary-ion mass spectrometry (SIMS) results show that high degeneracy of InN films was ascribed to the effect of carbon and oxygen contaminants, and exclude that hydrogen was possible donor in our system.