Reserch for the Shear Stress of Wafer Surface at the Chemical Mechanical Polishing

• Main Authors: CHIU SHUN JUNG, 邱順榮
• Other Authors: 蔡宏榮
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/93561962237426338925

碩士 === 吳鳳技術學院 === 光機電暨材料研究所 === 95 === Chemical mechanical polishing (CMP) is a process used in the silicon wafer fabrication industry to achieve the planarity necessary for the photolithography requirements of multilevel interconnects. CMP has been used in the global planarization of wafer surfaces as, compared to other planarization processes, it can prouide a flat surface for the wafer . However, the mechanism process of CMP is not well understood yet. This thesis, from the particle fluid viewpoint, investigates the CMP experiment process that affect the shear stress of the polishing surface under each different polishing parameter, then we could fully understand the mechanism process of CMP. Achievement of the research includes the following items. (1) At the CMP experiment, the diameter of the polishing particle and Young`s modulus is on the contrary tendency with the shear stress of the polishing surface. That is, the shear stress of the polishing surface as the diameter of the polishing particle & Young`s modulus increase. (2) At the experiment,the shear stress of the polishing surface goes down faster when the diameter of the polishing particle is under 1 μm. As the diameter of the polishing particle is over 1 μm, the shear stress of the polishing surface goes down slower. (3) The shear stress of the polishing surface goes up when the polishing pressure increase at the CMP experiment. (4) Experiment data of CMP shows that polishing pressure has a higher effect on the shear stress of the polishing surface than the polishing velocity.