Study of perpendicular anisotropy and exchange-coupling on multilayer magnetic thin films
碩士 === 國立雲林科技大學 === 電子與資訊工程研究所 === 94 === The main structure of magnetic random access memory (MRAM) is magnetic tunnel junction (MTJ). All MRAMs reported so far consist of in-plane magnetization films, which require an aspect ratio (length/width) of 2 or more in order to reduce vortex magnetization...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/85983208041256221521 |