Characteristics of ZnO films grown on GaN templates
碩士 === 國立中正大學 === 光機電整合工程所 === 95 === In this study, ZnO films were deposited on GaN / (0001) sapphire substrates by atomic layer deposition (ALD). Under certain experimental conditions, high optical quality ZnO films were achieved. ZnO films were grown using diethylzinc (DEZn) and high purity nit...
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| Format: | Others |
| Language: | zh-TW |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/91895610402985772187 |
| Summary: | 碩士 === 國立中正大學 === 光機電整合工程所 === 95 === In this study, ZnO films were deposited on GaN / (0001) sapphire substrates by atomic layer deposition (ALD). Under certain experimental conditions, high optical quality ZnO films were achieved. ZnO films were grown using diethylzinc (DEZn) and high purity nitrous oxide (N2O) gas precursors carried by purified nitrogen (N2) as gas.
Based upon θ-to-2θ X-ray diffraction data along with the images of field emission scanning electron microscopy (FESEM), the ZnO films were observer to show c-axis preferred orientation. The experimental result indicated that the c-axis is preferred orientation of these ZnO films. The morphology and crystallinity of a ZnO film were found to change significantly by varying its buffer layer thickness or deposition temperature. In addition, buffer-layer annealing will help to improve the optical properties of the ZnO films.
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