Study of the optical and electrical characteristics in the InGaN/GaN multi-quantum well LED with ETL structure
碩士 === 長庚大學 === 光電工程研究所 === 95 === InGaN/GaN multiple quantum wells (MQWs) are being successfully used as the active region of GaN-based blue and green light emitting diodes (LEDs) and laser diodes (LDs). In spite of this striking advanced technology, the emission process is affected by several pecu...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/96229639045537327964 |