The investigation of the mechanism and reliability for low voltage operation SONOS flash memory devices

碩士 === 長庚大學 === 光電工程研究所 === 95 === SONOS (Silicon Oxide Nitride Oxide Silicon) will become the man stream of nonvolatile memory products because of its simplicity in structure and scalable by comparing with conventional floating gate cells. The flash memory today, due to the vigorous development of...

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Bibliographic Details
Main Authors: Tseng Yuan-Heng, 曾元亨
Other Authors: Lai Chao-Sung
Format: Others
Language:en_US
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/96001377138117657280