Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications
碩士 === 長庚大學 === 電子工程研究所 === 95 === In this work, we found that NdN would be a dielectric. We observed that the formation of SiOxNy in the interface between the NdN and substrate. Silicon nitride films that contain oxygen are referred to as silicon oxynitride (SiOxNy) and combine the advantage of oxi...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06326225619284962137 |