Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications
碩士 === 長庚大學 === 電子工程研究所 === 95 === In this work, we found that NdN would be a dielectric. We observed that the formation of SiOxNy in the interface between the NdN and substrate. Silicon nitride films that contain oxygen are referred to as silicon oxynitride (SiOxNy) and combine the advantage of oxi...
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/06326225619284962137 |
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ndltd-TW-095CGU006860092015-10-13T16:41:40Z http://ndltd.ncl.edu.tw/handle/06326225619284962137 Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications 研發高介電常數介電層氮化釹及氮化鉺金屬閘極薄膜於互補式金屬氧化物半導體之應用 Sung-Ju Hou 侯松儒 碩士 長庚大學 電子工程研究所 95 In this work, we found that NdN would be a dielectric. We observed that the formation of SiOxNy in the interface between the NdN and substrate. Silicon nitride films that contain oxygen are referred to as silicon oxynitride (SiOxNy) and combine the advantage of oxides and nitrides. Oxynitride films also have improved thermal stability, cracking resistance, and reduced film stress. In addition, the work function of erbium (Er) was modified by nitrogen (N2) in RF-sputtering for the first time. By increasing N2 flow ratio from 2% to 4%, the work function of ErN was tuned from 3.16eV to 3.81eV. From the XRD diffraction data, ErN (111) orientation can be observed exceed 10% N2 ratio, which responsible for the work function increase of ErN film. Tung-Ming Pan 潘同明 2007 學位論文 ; thesis 63 en_US |
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en_US |
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Others
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NDLTD |
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碩士 === 長庚大學 === 電子工程研究所 === 95 === In this work, we found that NdN would be a dielectric. We observed that the formation of SiOxNy in the interface between the NdN and substrate. Silicon nitride films that contain oxygen are referred to as silicon oxynitride (SiOxNy) and combine the advantage of oxides and nitrides. Oxynitride films also have improved thermal stability, cracking resistance, and reduced film stress.
In addition, the work function of erbium (Er) was modified by nitrogen (N2) in RF-sputtering for the first time. By increasing N2 flow ratio from 2% to 4%, the work function of ErN was tuned from 3.16eV to 3.81eV. From the XRD diffraction data, ErN (111) orientation can be observed exceed 10% N2 ratio, which responsible for the work function increase of ErN film.
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| author2 |
Tung-Ming Pan |
| author_facet |
Tung-Ming Pan Sung-Ju Hou 侯松儒 |
| author |
Sung-Ju Hou 侯松儒 |
| spellingShingle |
Sung-Ju Hou 侯松儒 Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| author_sort |
Sung-Ju Hou |
| title |
Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| title_short |
Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| title_full |
Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| title_fullStr |
Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| title_full_unstemmed |
Development of High-k NdN Dielectrics and Metal Gate ErN films for CMOS Applications |
| title_sort |
development of high-k ndn dielectrics and metal gate ern films for cmos applications |
| publishDate |
2007 |
| url |
http://ndltd.ncl.edu.tw/handle/06326225619284962137 |
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