Fluorine Effects on the Characterization of LTPS Thin-Film Transistors
碩士 === 長庚大學 === 電子工程研究所 === 95 === In LTPS TFTs research, the gate oxides were usually deposited as TEOS or PECVD oxide and so on. As the same, EOT shrinking trend in CMOS technology, hafnium oxide (HfO2) was applied as gate insulators of LTPS TFT to have better performance. However, many researcher...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01051365330051622172 |