RF Model Establishment of sub-micron MOSFET
碩士 === 長庚大學 === 半導體產業研發碩士專班 === 95 === ABSTRACT A high-freqency model for MOSFET by Nanya Technology Corporation is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the BSIM3v3 model by U.C. Berekeley, and extracted extrinsic parameters a...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/65771245485120985285 |