| Summary: | 碩士 === 長庚大學 === 半導體產業研發碩士專班 === 95 === ABSTRACT
A high-freqency model for MOSFET by Nanya Technology Corporation
is presented which achieves a good agreement with the device DC and
microwave performance. This model is based on the BSIM3v3 model by
U.C. Berekeley, and extracted extrinsic parameters and lossy substrate parameters. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good
correspondences between measurement and simulation DC、microwave and
power performance, which confirm the validity of this model.
In chapter 4, a low noise amplifier was demonstrated by MOSFET of
Nanya Technology Corporation as the core of the design, targeting a center frequency of 5.2 GHz apply to WLAN 802.11a system.
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