RF Model Establishment of sub-micron MOSFET

• Main Authors: Yung-Chih Chen, 陳泳志
• Other Authors: Hsien-Chin Chiu
• Format: Others
• Language: zh-TW
• Published: 2007
• Online Access: http://ndltd.ncl.edu.tw/handle/65771245485120985285

碩士 === 長庚大學 === 半導體產業研發碩士專班 === 95 === ABSTRACT A high-freqency model for MOSFET by Nanya Technology Corporation is presented which achieves a good agreement with the device DC and microwave performance. This model is based on the BSIM3v3 model by U.C. Berekeley, and extracted extrinsic parameters and lossy substrate parameters. The measured and model-predicted device DC I-V curves, S-parameters, and power performance have been compared. Good correspondences between measurement and simulation DC、microwave and power performance, which confirm the validity of this model. In chapter 4, a low noise amplifier was demonstrated by MOSFET of Nanya Technology Corporation as the core of the design, targeting a center frequency of 5.2 GHz apply to WLAN 802.11a system.