Study of multi-layered copper-contained ohmic contact structure on n-type GaAs and its application
碩士 === 中原大學 === 電子工程研究所 === 95 === The multi-layered Ge / Cu / Ni / Au metal structure is investigated through the TLM method and through surface morphology inspection to study the feasibility of forming an n-type ohmic contact for n-GaAs material and its application in InGaP / GaAs DJ solar cell in...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/30891747517558550045 |