Photoluminescence properties of InN epilayers
碩士 === 中原大學 === 應用物理研究所 === 95 === Abstract We investigated the optical properties of InN epilayers using photoluminescence (PL), time-resolved PL (TRPL) and Raman scattering. We suggest that the formation of compensating acceptors (indium vacancies) after rapid thermal annealing (RTA) is responsib...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/26407087957463493571 |