A Dual Port SRAM Cell for Prevention of Sense Margin Reduction
碩士 === 朝陽科技大學 === 資訊工程系碩士班 === 95 === Due to the rapid developments of VLSI technology, embedded systems, and PMP (Personal Media Player, PMP), the demand on SRAM (Static Random Access Memory) increases accordingly. A simple structure is proposed to achieve many goals such as low-leaking current, hi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/20416139589527065609 |