Low scratch of the copper CMP with High efficiency Organic Abrasive
碩士 === 逢甲大學 === 化學工程學所 === 95 === In this study, the usage of the self-assembled new material abrasive (PS@CeO2) replaced the Al2O3 abrasive using in Copper Chemical Mechanical Polishing (CMP). The slurry improved the scratches incurred during the process of polishing. We also inquired into the addi...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/45220798492266837279 |