Characteristics of polar and non-polar GaN-based films and light-emitting diodes
博士 === 逢甲大學 === 材料科學所 === 95 === Polar AlxGa1-xN (0≦x≦0.5) films and AlxGa1-xN/GaN hetero- structures were grown on (0001) and (11-20) sapphire substrates at elevated temperatures by alternate supply of trimethylgallium (TMG) with (or without) trimethylaluminum (TMA) in group III flow and ammonia (N...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/67875869478802547985 |