The Zn1-xMgxO films prepared by sol-gel process and used as active layer for thin film transistors

碩士 === 逢甲大學 === 材料科學所 === 95 === This study successfully prepared ZnMgO thin films by sol-gel process and took Mg-additive up with thin film properties. In addition, the typical bottom-gate structure device of Zn1-xMgxO-base TFTs was fabricated by hybrid method that combined standard micro-electrica...

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Bibliographic Details
Main Authors: Min-Chi Wang, 王敏吉
Other Authors: Chien-Yei Tsay
Format: Others
Language:zh-TW
Published: 2007
Online Access:http://ndltd.ncl.edu.tw/handle/93308946697852006064