Investigations of Channel Composition On δ-DopedInxAl1-xAs/InyGa1-yAs/GaAs MHEMTs Characteristics
碩士 === 逢甲大學 === 電子工程所 === 95 === In the thesis, we intend to grow the δ-doped InxAl1-xAs/InyGa1-yAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMTs) with InyGa1-yAs channel to effectively relieve the impact-ionization effects has been successfully fabricated by the molecular beam epitaxy...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/05723084477424334457 |