Investigations of Channel Composition On δ-DopedInxAl1-xAs/InyGa1-yAs/GaAs MHEMTs Characteristics
碩士 === 逢甲大學 === 電子工程所 === 95 === In the thesis, we intend to grow the δ-doped InxAl1-xAs/InyGa1-yAs/GaAs Metamorphic High Electron Mobility Transistor (MHEMTs) with InyGa1-yAs channel to effectively relieve the impact-ionization effects has been successfully fabricated by the molecular beam epitaxy...
Main Authors: | , |
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Other Authors: | |
Format: | Others |
Language: | en_US |
Published: |
2007
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Online Access: | http://ndltd.ncl.edu.tw/handle/05723084477424334457 |