The study of Bottom-Gated Poly-Si Thin Film Transistors Employing Novel Extended Metal Pad
碩士 === 逢甲大學 === 電子工程所 === 95 === In this thesis, we have successfully fabricated the drain overlapped bottom gate TFT structure, we use drain electrode extended metal-pad overlapped the channel-drain junction technology to relief the high electric field at drain region. Take this structure into comp...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/46226491788775727667 |