Impact Of Metal Ion Contamination Of Passivation Layer For MOSFET Characteristics
碩士 === 逢甲大學 === 電子工程所 === 95 === A local strained channel nMOSFETs has been fabricated by utilizing a heavy mechanical stress SiNX-capping layer, and further improved the carrier mobility to achieve the purpose of high operation speed. In this experiment, SiNX-capping layer was deposited by PECVD wh...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01487739301315064463 |