Inductively Coupled Plasma Etching Enhances Light Power in GaN Light Emitting Diodes
碩士 === 義守大學 === 電子工程學系碩士班 === 95 === In the research, we use inductively coupled plasma (ICP) dealing with p-type GaN film surface and applying to the GaN light emitting diodes (LEDs) to discuss how ICP power, time treatment and the changing in Cl2/Ar gas rates influence on electric characteristics...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/95496502019572189066 |