Inductively Coupled Plasma Etching Enhances Light Power in GaN Light Emitting Diodes

• Main Authors: Cheng-Wei Huang, 黃政維
• Other Authors: Meiso Yokoyama
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/95496502019572189066

碩士 === 義守大學 === 電子工程學系碩士班 === 95 === In the research, we use inductively coupled plasma (ICP) dealing with p-type GaN film surface and applying to the GaN light emitting diodes (LEDs) to discuss how ICP power, time treatment and the changing in Cl2/Ar gas rates influence on electric characteristics and light output efficiency. The experimental results show that p-type GaN film surface roughness has risen to 26.2 nm from 15.2 nm by atomic force microscope (AFM) measuring through treating in 200 W ICP power, 60 second treatment, 35 sccm Cl2 and 5 sccm Ar, representing ICP effect on roughing p-type GaN film surface. Besides, using ICP treating p-type GaN film also has the effect in deleting oxide layer of GaN surface. Therefore, the produced blue LEDs have better electric performance. We also discuss the effect of chemical etching and physical etching of Cl2/Ar gas in the research. Applying the roughed p-type GaN film to produce blue LEDs can make the axis luminance raise about 30 percent because the chance which light output from LEDs surface raises and make light output efficiency promote after roughing p-type GaN film surface.