Nitride-based Light Emitting Diodes with p-AlInGaN Surface Contact Layers
碩士 === 崑山科技大學 === 電機工程研究所 === 95 === In order to improve the luminance of LED, the dream of solid state light will be realized by using AlInGaN layer which characteristics will produce hexagon pits. The P AlInGaN layer was used in our reserrch to reduce critical angle losses in order to improve the...
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| Format: | Others |
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2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/44734591293271541828 |