Characteristics of ZnO films grown on (11-20) sapphire substrates by atomic layer deposition
碩士 === 國立中興大學 === 物理學系所 === 95 === Zinc oxide (ZnO) films were grown at 600℃ on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. Low-temperature (LT) ZnO buffer layers, 50nm in thickness, were deposited to optimize th...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27630429296285421820 |