Characteristics of ZnO films grown on (11-20) sapphire substrates by atomic layer deposition
碩士 === 國立中興大學 === 物理學系所 === 95 === Zinc oxide (ZnO) films were grown at 600℃ on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. Low-temperature (LT) ZnO buffer layers, 50nm in thickness, were deposited to optimize th...
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| Format: | Others |
| Language: | en_US |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27630429296285421820 |
| Summary: | 碩士 === 國立中興大學 === 物理學系所 === 95 === Zinc oxide (ZnO) films were grown at 600℃ on (11-20) sapphire substrates by atomic layer deposition (ALD) using diethylzinc (DEZn) and nitrous oxide (N2O) as source precursors. Low-temperature (LT) ZnO buffer layers, 50nm in thickness, were deposited to optimize the growth process for achieving high quality ZnO films. The influence of buffer-layer on the optical properties of ZnO films was also studied. θ-to-2θ X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM) and photo luminescence (PL) measurements were conducted to reveal the structural, morphological and optical characteristics of the ZnO films. Based on the characterization data, buffer-layer annealing and post-annealing were found to enhance the optical characteristics of ZnO films.
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