Valence Band Structure of Strained SixC1-x Alloys in 2D PMOS Inversion Layer and Bulk Material
碩士 === 中興大學 === 物理學系所 === 95 === The traditional material in the Channel of MOSFET is Silicon. But we research the valence band structure of the original strained SixC1-x alloys in the channel. Because of the miniaturization of devices, the channel length abate to~10nm. So the quantum effects become...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/73441998361820029295 |