Study on the Reliability of Hydrogenated Amorphous Silicon Thin Film Transistors under AC Gate and Drain Bias Stress
碩士 === 中興大學 === 電機工程學系所 === 95 === In this paper, we investigate the reliability of asymmetric a-Si:H TFTs with three mask process. And we study the instability mechanisms of a-Si:H TFTs under alternating current (AC) and direct current (DC) bias stress. This thesis can be divided into two major par...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/57482057510563293735 |