Investigation of Optoelectronic Properties and Reliability on New GaN Light-Emitting Diodes
碩士 === 國立中興大學 === 精密工程學系所 === 95 === In this thesis, the properties of lamp packaged from the light emitting diodes (LEDs) grown by epitaxial lateral overgrowth (ELOG) and Si treatment were compared. Here, these LEDs (before packaged) present almost the same luminous intensity. Then, these two kind...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/29659731553115088524 |