Investigation of GaN thin film by facet-controlled epitaxial lateral overgrowth method
碩士 === 國立中興大學 === 精密工程學系所 === 95 === The material gallium nitride (GaN) is currently applied on photoelectronic devices, especially for blue or green light emitting diode and blue laser diode. In the commercial field, the most commonly used technology for growing GaN epilayer on the sapphire substr...
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/26422275399031811491 |