Improvement of external quantum efficiency of AlGaInP-based LEDs by high reflective metal substrate and roughing window layer
碩士 === 國立中興大學 === 精密工程學系所 === 95 === In general, the lattice constant of AlGaInP is almost matched to GaAs substrate, so that the GaAs is used to be the substrate for AlGaInP epilayer growth. However, the band gap of GaAs is 1.42 eV and results in the most visibale-spectrum photons being absorbed. T...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Online Access: | http://ndltd.ncl.edu.tw/handle/54960965432423161971 |