| Summary: | 碩士 === 國立成功大學 === 化學工程學系碩博士班 === 95 === Nowadays, the semiconductor industry is in full swing to pursue the miniaturization of electronic devices. However the most colossal difficulty is right in patterning technologies which used to carry out nanoscale patterns on resist material. Nanoprinting is a burgeoning lithographic technique, and it promises high-throughput of nanostructures pattering with simple apparatus setting. Nanoimprint technique can achieve high patterning resolutions without the limitations of light diffractions or beam scatterings utilized in conventional techniques.
Undoubtedly, a superior process must possess some advantageous features, such as including simplicity, low-cost, and high-throughput.
Therefore, we mainly exploit anti-sticking surface mold to apply in reversal imprinting process. Our work could be generally divided into
two subjects.
Firstly, we develop reversal imprint technique with rolling process. The patterned mold was treated with OTS and DMDS silanes, with different alkyl length respectively, in the ratio 1:1. We dissolved PMMA in chlorobenzene and spin coat it uniformly on imprinting mold which can be easily peeled off after rolling process. Finally, our high-throughput and continuous process could transfer any microscale or nanoscale pattern (6μm-400nm) such as dot-, stripe-, and tetrahedron-like to target substrate. Consequently, the lower the temperature and pressure we adopt, the less pattern distortion occurs. And the thickness of residual layer could be reduced less than 200 nm through controlling the concentration of PMMA and spin coating speed. Furthermore, it is easy to fully transfer
the whole patterns from large scale mold without defects.
Secondly, our other goal is to transfer polymer pattern to a variety of substrates without residue via reversal imprinting process at low temperature and pressure. According to different silanes possess distinct functional groups; it could lead to different surface chemical bonding through solution method we utilize here. We modify the concave facet with FOTS different from the protruding facet treated by OTS silane. Thus PMMA can be filled into concavity selectively through spin coating firstly. In sue we stack up epoxy layer which adhere to substrate, and finally we transfer the pattern without residual layer. Ultimately, we can directly construct 3D pattern on patterned substrate without the need to etch residual layer or remove sacrificial film.
|
|---|
