Characterization of HfOx-NbOx Thin Films for Gate Dielectric Application
碩士 === 國立成功大學 === 材料科學及工程學系碩博士班 === 95 === Hafnium oxide (HfOx), niobium oxide (NbOx) and hafnium-niobium oxide (HfNbxOy) gate dielectrics were prepared on Si wafers by electron-beam evaporation from Hf and Nb sources, followed by rapid thermal annealing in N2 ambient at 500°C~800°C for 20s. Aluminu...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2007
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| Online Access: | http://ndltd.ncl.edu.tw/handle/47083169671721229672 |