Application of Substrate-Strained Silicon Technology for High-Mobility MOSFETs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Strained silicon on relaxed silicon-germanium (SiGe) substrates is a promising candidate for transistor performance enhancement. However, the materials quality of SiGe virtual substrates degrades upon grading to high Ge concentrations due to the formation of...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/59395573310613460518 |