Application of Substrate-Strained Silicon Technology for High-Mobility MOSFETs
博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Strained silicon on relaxed silicon-germanium (SiGe) substrates is a promising candidate for transistor performance enhancement. However, the materials quality of SiGe virtual substrates degrades upon grading to high Ge concentrations due to the formation of...
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| Format: | Others |
| Language: | en_US |
| Online Access: | http://ndltd.ncl.edu.tw/handle/59395573310613460518 |
| Summary: | 博士 === 國立成功大學 === 微電子工程研究所碩博士班 === 95 === Strained silicon on relaxed silicon-germanium (SiGe) substrates is a promising candidate for transistor performance enhancement. However, the materials quality of SiGe virtual substrates degrades upon grading to high Ge concentrations due to the formation of threading dislocation pileups. In this thesis, growth strategy for the control and elimination of these dislocations is proposed and utilized to fabricate relaxed SiGe layers of good quality on Si. We also demonstrate optimized channel engineering and process integration in strained-Si CMOS technology. The trade-off between mobility enhancement and short channel effects (SCE) control for different Si-cap layer thickness and various Ge content in the relaxed-SiGe virtual substrate are investigated. A strained Si device with improved immunity to SCE and reduced defect density was demonstrated at gate length of 80 nm. Besides, Ge out-diffusion and strain relaxation effect in strained-Si layer are studied in both DC and low frequency (1/f) noise. The 1/f noise mechanism of strained-Si nMOSFETs has been investigated.
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